Methods for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus

ABSTRACT

Methods for monitoring meniscus processing of a wafer surface to stabilize a meniscus are provided. In one example, the processing is in response to a current recipe that defines a desired gap between the wafer surface and a proximity head. The method includes the operations of monitoring current meniscus processing to determine that a current gap is other than the desired gap, and identifying a calibration recipe that specifies the current gap. The method then continues the meniscus processing of the wafer surface using process parameters specified by the identified calibration recipe.

CLAIM OF PRIORITY

This application is a divisional application of U.S. application Ser.No. 12/246,461 entitled “Methods and Apparatus for Correlating Gap Valueto Meniscus Stability in Processing of A wafer Surface by ARecipe-Controlled Meniscus” filed on Oct. 6, 2008 and incorporatedherein by reference, and U.S. application Ser. No. 12/246,461 claimspriority to U.S. Provisional Application No. 60/999,585 filed on Oct.18, 2007, titled “Methods of and Apparatus for Correlating Gap Value toMeniscus Stability in Processing of a Wafer Surface by aRecipe-Controlled Meniscus”.

BACKGROUND

1. Field of the Invention

The present invention relates generally to wafer processing processesand to equipment for processing wafers, and more particularly to methodsand apparatus for correlating gap value to meniscus stability inprocessing of a surface of a wafer by a recipe-controlled meniscus.

2. Description of the Related Art

In the semiconductor chip fabrication industry, it is necessary to cleanand dry a wafer (e.g., a substrate) after a fabrication operation if,e.g., the operation leaves unwanted residues on surfaces of thesubstrate. Examples of such a fabrication operations include plasmaetching and chemical mechanical polishing (CMP), each of which may leaveunwanted residues on surfaces of the substrate. Unfortunately, if lefton the substrate, the unwanted residues may cause defects in devicesmade from the substrate, in some cases rendering the devices inoperable.

Cleaning the substrate after a fabrication operation is intended toremove the unwanted residues. After a substrate has been wet cleaned,the substrate must be dried effectively to prevent water or otherprocessing fluid (hereinafter “fluid”) remnants from also leavingunwanted residues on the substrate. If the fluid on the substratesurface is allowed to evaporate, as usually happens when droplets form,residues or contaminants previously dissolved in the fluid will remainon the substrate surface after evaporation and can form spots. Toprevent evaporation from taking place, the cleaning fluid must beremoved as quickly as possible without the formation of droplets on thesubstrate surface. In an attempt to accomplish this, one of severaldifferent drying techniques may be employed such as spin-drying, IPA, orMarangoni drying. All of these drying techniques utilize some form of amoving liquid/gas interface on a substrate surface, which, only ifproperly maintained, results in drying of a substrate surface withoutthe formation of droplets. Unfortunately, if the moving liquid/gasinterface breaks down, as often happens with all of the aforementioneddrying methods, droplets form, droplet evaporation occurs, andcontaminants remain on the substrate surface.

In view of the foregoing, there is a need for improved cleaning systemsand methods that provide efficient substrate cleaning while reducing thelikelihood of contaminants remaining on the substrate surface from driedfluid droplets.

SUMMARY

Broadly speaking, the embodiments fill the above need by monitoringprocessing of a surface of a wafer by a recipe-controlled meniscus. Aprocessor is configured for response to orientation monitor signals toallow maintaining meniscus stability. The orientation monitor signalsallow this meniscus stability by maintaining a meniscus configuration inone continuous length between process monitoring beams and extendingcontinuously across a gap between a fluid emitter surface of a proximityhead and the wafer surface. The needs are further filled by calibrationdata that defines recipes corresponding to a stable meniscus. Inmeniscus processing using a current recipe, identification of anundesired gap is correlated to the calibration data to allow meniscusprocessing to be maintained (i.e., continue) with a stable meniscus.

It should be appreciated that the present invention can be implementedin numerous ways, including as a method, a process, an apparatus, or asystem. Several inventive embodiments of the present invention aredescribed below.

In one embodiment, apparatus is provided for monitoring meniscusprocessing of a wafer surface to maintain meniscus stability. Theprocessing is according to a recipe. A processor is configured torespond to orientation monitor signals and to a current recipe forgenerating meniscus monitor signals to allow maintaining meniscusstability.

In another embodiment, apparatus is provided for monitoring processingof a wafer surface using a meniscus, the monitoring avoiding meniscusseparation by maintaining the meniscus stable during the processing. Theprocessing is in response to a recipe. Meniscus monitors are configuredto separately receive a return laser beam from each respective oppositeside of a wafer carrier for generating a separate orientation monitorsignal representing the relative orientation of the wafer surface and afluid emitter surface at the respective side. A processor is configuredto respond to the orientation monitor signals and to a current recipefor generating meniscus monitor signals for allowing the stable meniscusto be maintained during further meniscus processing.

In another embodiment, a method is provided for monitoring meniscusprocessing of a wafer surface to stabilize the meniscus. The processingis in response to a current recipe that defines a desired gap betweenthe wafer surface and a proximity head. An operation monitors currentmeniscus processing to determine that a current gap is other than adesired gap. A calibration recipe is identified and specifies thecurrent gap. Continued meniscus processing of the wafer surface usesprocess parameters specified by the identified calibration recipe.

In another embodiment, a method is provided for monitoring meniscusprocessing of a wafer surface to maintain a meniscus in a stablecondition, the processing being in response to a current recipe thatspecifies a desired gap between the wafer surface and a proximity head.The current recipe further specifies process parameters for the meniscusprocessing. An operation is performed to monitor current meniscusprocessing to determine whether a current gap is other than a desiredgap and is configured with gap values to allow the meniscus to bemaintained in the stable condition. If the current gap is determined tobe other than the desired gap and is so configured, an operationidentifies a calibration recipe that specifies the current gap andcalibrated process parameters for use in establishing a stable meniscusacross the current gap. An operation of automatic adjusting of theprocess parameters of the current recipe to the process parameters ofthe identified calibration recipe is done, and the meniscus processingof the wafer surface is continued using the process parameters specifiedby the identified calibration recipe.

Other aspects and advantages of the invention will become apparent fromthe following detailed description, taken in conjunction with theaccompanying drawings, illustrating by way of example the principles ofthe invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be readily understood by the followingdetailed description in conjunction with the accompanying drawings, andlike reference numerals designate like structural elements.

FIG. 1 is a graph showing curves defined relative values of a gap and tolocations across a wafer, the relative values being between a proximityhead and the surface of a wafer, the curves relating the relative valuesto meniscus stability according to embodiments of the present invention.

FIG. 2A is a perspective view showing a carrier moving the wafer pastthe proximity head during wafer processing in embodiments of the presentinvention.

FIG. 2B is a plan view showing the wafer being processed by the meniscusaccording to embodiments of the present invention.

FIG. 2C is a perspective view showing the meniscus during the waferprocessing by the embodiments of the present invention.

FIGS. 2D and 2E are enlarged elevational views showing a stable meniscusduring the wafer processing.

FIG. 3A is an elevational view showing a plane of the head in anundesired tilted orientation relative to the surface of the wafer.

FIG. 3B is an elevational view showing the plane of the head in anundesired pitched orientation relative to the surface of the wafer.

FIGS. 4A and 4B are respective elevational and plan views showingexemplary undesired breaks in the meniscus avoided by the depictedembodiments.

FIG. 5 is a diagram showing a processor configured to respond to anorientation monitor signal and to a recipe that defines parameters formeniscus processing.

FIG. 6A is a plan view of the proximity head configured with physicalparameters for adjustment relative to the carrier.

FIG. 6B is an elevational view of one embodiment of the proximity headconfigured with a physical parameter for manual adjustment relative tothe carrier.

FIG. 6C is an elevational view of another embodiment of the proximityhead configured with a physical parameter for automatic adjustmentrelative to the carrier.

FIG. 7 is a diagram showing a CPU of the processor executing acorrelation module to access a database that stores a matrix of recipesto facilitate allowing the maintaining of meniscus stability.

FIGS. 8A and 8B illustrate flow charts of a method under control of thecorrelation module to allow maintaining of the meniscus stability.

FIG. 8C illustrates a flow chart of a method of monitoring meniscusprocessing to automatically maintain a meniscus in a stable condition.

DETAILED DESCRIPTION

Several exemplary embodiments are disclosed, which define examples ofmonitoring of meniscus processing of a surface of a wafer. Themonitoring is of a gap between a proximity head and the wafer. The gapis spanned by the meniscus. Gap value and variations of the gap valueduring processing are correlated to meniscus stability during theprocessing. Meniscus stability is in terms of a continuous configurationof the meniscus, the continuous configuration being without separationof the meniscus (i.e., without meniscus breakup). As a result, themonitoring may result in continued meniscus processing of the wafersurface by allowing the continuous configuration to be maintained. Inone embodiment, apparatus monitors meniscus processing of a wafersurface to maintain meniscus stability, and the processing is accordingto a recipe. A meniscus monitor system mounted on a proximity headgenerates plural orientation monitor signals representing the relativeorientation of a wafer surface and a proximity head during processing inresponse to a current recipe. A processor is configured to respond tothe orientation monitor signals and to the current recipe for generatingmeniscus monitor signals to allow maintaining meniscus stability.

In another embodiment, there is a method of monitoring meniscusprocessing of a wafer surface to stabilize the meniscus. The processingis according to a current recipe that defines a desired gap between thewafer surface and a proximity head. An operation of the method monitorscurrent meniscus processing to determine that a current gap is otherthan a desired gap. Another operation identifies a calibration recipethat specifies the current gap. The identified calibration recipe isknown to specify process parameters for a stable meniscus. An operationcontinues the meniscus processing of the wafer surface using processparameters specified by the identified calibration recipe to maintainthe meniscus stable.

In another embodiment, there is a method of monitoring meniscusprocessing of a wafer surface to maintain a meniscus in a stablecondition, the processing being in response to a current recipe thatspecifies a desired gap between the wafer surface and a proximity head.The current recipe further specifies process parameters for the meniscusprocessing. An operation monitors current meniscus processing todetermine whether a current gap is other than a desired gap and isconfigured with gap values to allow the meniscus to be maintained in thestable condition. An operation is effective if the current gap isdetermined to be other than the desired gap and is so configured, andidentifies a calibration recipe that specifies the current gap andcalibrated process parameters for use in establishing a stable meniscusacross the current gap. An operation automatically adjusts the processparameters of the current recipe to the process parameters of theidentified calibration recipe. Another operation continues the meniscusprocessing of the wafer surface using the process parameters specifiedby the identified calibration recipe.

Several inventive embodiments of the present invention (herein referredto as “embodiments”) are described below. It will be apparent to thoseskilled in the art that the present invention may be practiced withoutsome or all of the specific details set forth herein.

The word “wafer,” as used herein, denotes without limitation,semiconductor substrates, hard drive disks, optical discs, glasssubstrates, flat panel display surfaces, liquid crystal displaysurfaces, etc., on which materials or layers of various materials may beformed or defined in a processing chamber, such as a chamber in which aplasma is established for processing, e.g., etching or deposition. Allsuch wafers may be processed by the embodiments in which improvedcleaning systems and methods provide efficient wafer cleaning whilereducing the likelihood of contaminants remaining on the wafer surfacefrom dried liquid droplets.

Orientation of the wafer (and of structures) is described herein interms of orthogonal X, Y and Z axes. Such axes may define directions,such as directions of surfaces or of movements or of planes, etc.

The word “meniscus,” as used herein, refers to a volume of liquidbounded and contained in part by surface tension of the liquid. In theembodiments, the meniscus in the contained shape can be moved relativeto a surface. The “surface” may be a surface of a wafer (“wafersurface”), or a surface of a carrier (“carrier surface”) that mounts thewafer, for example. The term “W/C surface” refers collectively to thewafer surface and the carrier surface. A desired meniscus for meniscusprocessing is stable. The stable meniscus has a continuousconfiguration. This configuration is continuous completely across adesired width (see W below, FIG. 2D) in the X direction and across adesired length (see LD, FIG. 2E) in the Y direction and the meniscusextends continuously across a desired gap in the Z direction (FIGS. 2D &2E). In specific embodiments, the meniscus may be established to bestable in this continuous configuration by the delivery of liquids tothe W/C surface while also removing the liquids from the W/C surface.Further, meniscus stability is allowed to be maintained by using acalibration recipe, or by varying a gap value.

The term “proximity head”, as used herein, refers to an apparatus thatcan receive liquids, apply the liquids to the W/C surface, and removethe liquids from the W/C surface, when the proximity head is placed inclose relation to the W/C surface. The close relation is when there is asmall (e.g., four mm) gap between (i) the carrier surface (or the wafersurface) and (ii) a surface (“head surface”) of the proximity head thatapplies the meniscus to the W/C surface. Thus, the head is spaced by thegap from the W/C surface. In one embodiment, the head surface is placedsubstantially parallel to the wafer surface and substantially parallelto the carrier surface (e.g., in set-up). A portion of the meniscus maythus be defined between the head surface and the wafer surface, andanother portion of the meniscus may thus be defined between the headsurface and the carrier surface. These portions of a stable continuousmeniscus are continuous with each other to define one meniscus.

The term “placed in close relation to” refers to “proximity” of the headsurface and the W/C surface, the proximity being defined by the gap. Thegap is a proximity distance measured in the Z direction. Differentdegrees of proximity are possible by adjusting the relative Z directionpositioning of the carrier and the head surface, e.g., during set-up. Inone embodiment, exemplary proximity distances (gaps) may be betweenabout 0.25 mm and about 4 mm, and in another embodiment may be betweenabout 0.5 mm and about 1.5 mm, and in a most preferred embodiment thegap may be about 0.3 mm. In one embodiment the proximity head receives aplurality of liquid inputs and is also configured with vacuum ports forremoving the received liquids.

By controlling the delivery to, and removal of the liquids from, themeniscus, the meniscus can be controlled and moved relative to the W/Csurfaces. In some embodiments, during the processing the wafer may bemoved, while the proximity head is still, and in other embodiments, thehead may be moved while the wafer remains still. Further, forcompleteness, it should be understood that the processing can occur inany orientation, and as such, the meniscus may be applied to W/Csurfaces that are not horizontal (e.g., carriers or wafers that are atan angle to horizontal). A preferred embodiment is described in which:(i) the wafer is moved by the carrier in the X direction, (ii) a desiredorientation of the W/C surfaces is horizontal and parallel to the headsurface (i.e., in an X-Y plane), (iii) the proximity head is still, (iv)the length of the head surface extends in the Y direction across the W/Csurface and is passed by the carrier and wafer moving parallel to the Xdirection, (v) the head surface and the W/C surface are spaced by adesired gap having a uniform value (i.e., uniform in the Z directionacross the entire X and Y direction extents of the gap), and (vi) themeniscus is stable and extends in a continuous configuration (i.e.,without separation) across the gap and thus extends continuously in eachof the X, Y & Z directions across the gap.

The term “recipe” refers to computer data, or information in other form,that defines, or specifies, (1) process parameters for a desiredmeniscus process to be applied to the wafer; and (2) physical parametersrelated to establishing the gap. For the liquid or liquids that definethe meniscus, the process parameters can include the type of liquid, andthe pressures, flow rates and chemistries of the liquid. For themeniscus, the process parameters can include the size, shape andlocation of the liquid meniscus. For the relative movement between theproximity head and the W/C surface, the process parameters can include(i) the rate of travel of the carrier with respect to the proximityhead, which may be constant or vary depending on the position of thecarrier with respect to the proximity head, e.g., the rate of travel ofthe carrier may be slower as the meniscus transitions on and off thewafer, providing additional time for the meniscus liquid to flow out ofthe gap between the carrier and the wafer; and (ii) timing of thecontrol of any of the other process parameters according to the rate oftravel or the location of the wafer relative to the proximity head. Forthe meniscus, the physical parameters can include data defining whereand by how much the proximity head is located with respect to thecarrier and the wafer.

Analysis by the Applicants of the present invention indicates that oneproblem in the use of a recipe-controlled meniscus defined between theproximity head and the W/C surface to be processed may be overcome bythe embodiments. The problem is the trend in semiconductor chipmanufacturing to use wafers having greater and greater diameters. Forexample, the diameters have ranged from the early 25.4 mm diameterthrough much iteration to the later 200 mm diameter that in 2007 isbeing displaced by 300 mm diameter wafers, and in 2007 predictions arefor use of a 450 mm diameter, e.g., by 2013. When the proximity headspans a Y direction distance more than the wafer diameter, and when thewafer diameter becomes larger and larger, the meniscus length LD mustbecome longer and longer in the Y direction so as to process the entirewafer in one relative motion between the proximity head and the wafer.The analysis also indicates that the problem relates to a desire toincrease throughput of wafers processed by such a meniscus, e.g., toincrease the speed of movement of the wafer relative to the proximityhead during meniscus processing. With increases in both meniscus lengthand the relative speed, such Applicants have identified the stability ofsuch a meniscus and the stability of that relative movement as beingrelated to obtaining desired results of the meniscus processing. Theanalysis by such Applicants indicates needs for a system for monitoringthe value of the gap between the proximity head and the W/C surfacesduring meniscus processing of the wafer. Also indicated is a need tocorrelate gap value and variations of the gap value during processing,to meniscus stability during the processing. The meniscus stability isin terms of (i) providing the continuous configuration of the meniscus,and (ii) maintaining the continuous configuration of the meniscus,without separation (i.e., without meniscus breakup) during meniscusprocessing. Related needs are also for calibration data that specifiesprocess and physical parameters for specific gap values, where the datacorresponds to a stable meniscus. The needs are also for performing thecorrelation using a monitored current gap value to identify one of thecalibration recipes that specifies the monitored current gap value. Theneeds are also for using the results of the correlation (i.e., using theidentified calibration recipe) to specify process parameters that may beused to allow a stable meniscus to be maintained. By filling these needsthe system avoids damage to the wafer due to the head touching the waferwhile allowing the wafer diameter to be longer in the Y direction andallowing the relative movements to be at an increased rate, for example.

With the above overview in mind, reference is now made to exemplarystructure configurations for filling these and other needs, which willenable avoiding damage to the wafer due to the head touching the wafer,while allowing increases in both the wafer diameter and the rate ofrelative head-to-wafer surface movements. FIG. 1 illustrates a graph100. Data shown in FIG. 1 may be understood by reference to FIGS. 2A-2E,in which the orthogonal X, Y and Z axes are shown. Graph 100 showsrelative values of a gap 101, and one gap embodiment is shown as 101D inFIGS. 2D and 2E. Specific gap values are not shown, but are referred tobelow as GVD, GVU, GVCAL, and GVN, for example. In FIG. 1, the relativegap values are plotted against location along a diameter D (FIG. 2B) ofa wafer 102 that is being meniscus processed (i.e., processed by arecipe-controlled meniscus, referred to generally as 104). In oneembodiment, the wafer 102 is moved in the X direction shown in FIG. 2A.In FIGS. 2C-2E, meniscus 104 is shown in a stable configuration(referred to as 104D with respect to FIGS. 2D and 2E). In contrast, FIG.4A shows an embodiment of the meniscus, referred to as meniscus 104DIS,and the meniscus contacts a surface 106 of the wafer. Surface 106 maydefine a wafer plane 107 shown in FIGS. 2D & 2E. As described below, inset up for processing the wafer is initially mounted parallel to an axisplane 108 (FIG. 2D) that is defined by the X and Y axes. FIG. 2D alsoshows the wafer with a wafer thickness T that extends parallel to the Zdirection. Apparatus 109 is described for monitoring each meniscus 104to allow the stable and continuous meniscus configuration to bemaintained.

FIG. 2C shows one embodiment of the apparatus 109 including a pair ofproximity heads 110 straddling the wafer 102 in the Z direction, andextending across (and beyond) the diameter D (FIG. 2B) of the wafer 102in the Y direction. The description below refers to one such head 110,it being understood that such description applies to each of the heads110 shown in FIG. 2C. A head surface, or fluid emitter surface, 112 ofthe head 110 is shown, with the surface configured to define a head, orreference, plane 114. In set-up, reference plane 114 is set parallel tothe axis plane 108 (FIG. 2D). In meniscus processing of the wafersurface 106, it is intended that the head 110 & reference plane 114 bestationary in each of the X, Y & Z directions. In practice, the head110, and thus the surface 112 and head plane 114, may not remainparallel to the wafer plane 107 during processing.

FIGS. 2D and 2E show one of the head surfaces 112 spaced from the upperwafer surface 106. The gap 101 identifies such space and is the gap thatis identified in FIG. 1. The gap 101 is shown in FIGS. 2D and 2E as adesired gap 101D and is between the respective head surface 112 and therespective wafer surface 106. The gap 101D is specified for the desiredmeniscus 104D having a desired gap value GVD that is in the desiredrange AR (FIG. 1), as described below. The desired gap shown in FIGS. 2D& 2E as 101D has the gap value GVD that is uniform, i.e., is the sameall across the X, Y & Z directions. Other gaps 101 are as describedbelow.

The desired gap 101D may be further described as follows with respect toFIGS. 2D & 2E. With the head surface 112 coincident with the referenceplane 114, the wafer surface 106 and the wafer plane 107 may be in theaxis plane 108, and the head surface 112 (and plane 114) may be parallelto the axis plane 108. In this embodiment (with parallel wafer plane 107and head plane 114), there is a relative orientation of the wafer 102and the head 110. The relative orientation is a desired orientation inwhich the desired gap 101D has the uniform gap value GVD. The uniformgap value may preferably be a value in the above desired range AR, forexample. FIG. 2E shows the uniform gap value extending in the Ydirection all along the length LD, including across and beyond thediameter D of the wafer 102. In this referenced embodiment with theuniform gap 101D in the above desired range AR and with the meniscus104D provided according to process parameters PRP, the meniscus 104D issaid to be “stable” and is identified in FIG. 1 by curve 118. Curve 118illustrates oscillations in amplitude that are small relative toamplitude oscillations of curve 122. Curve 118 also indicates that therelative values of the gap are within range AR. Curve 120 shows relativegap values for a case in which the W/C surface does not interact with ameniscus because the meniscus (and vacuum) in the head 110 are turnedoff. Curve 120 provides a reference situation enabling one to observevariations when there are W/C surface interactions with the meniscus.Curve 120 is shown having a decreasing relative gap value from left toright, indicating that the wafer is not properly placed in the carrier.By the embodiments, the amplitude oscillations in the curves arecorrelated to observations of the meniscus configuration at the time theamplitude oscillations were obtained. As a result of the observedmeniscus configurations, the related amplitude oscillations may becorrelated to meniscus stability and instability, as defined above. Theobservations may, for example, be visual observations of the currentmeniscus, and a record of meniscus stability and instability is relatedto currently monitored amplitude oscillations. In another embodiment,photographic or video observations may be evaluated and correlated tomeniscus stability and instability. As a result, meniscus stability maybe correlated to the range AR of relative gap values, and as describedbelow, ranges beyond range AR may be related to meniscus stability andinstability.

FIG. 2A also generally shows the apparatus 109 configured with anembodiment of a carrier 130. The carrier is configured to mount thewafer 102 for desired movement relative to the proximity heads 110 witheach wafer surface 106 in the desired orientation relative to therespective head plane 114 of the respective head 110. Generally, thedesired movement is in the X direction. As described above with respectto FIGS. 2D and 2E, such desired movement in the desired orientation iswith the wafer surfaces 106 and the respective head plane 114 spacedfrom each other by the gap 101D, in which the gap value GVD is uniform(i.e., desired).

Generally, in another embodiment shown in FIGS. 3A and 3B, one head 110is shown. The wafer movement relative to the head 110 may also includemovement with the wafer surface 106 and the head surface 112 in anundesired relative orientation relative to each other. Generally, theundesired relative orientation (also referred to as an undesiredorientation) is with the value of the gap (shown as 101U) including oneor more gap values GVU other than the uniform value GVD (shown as101U-1, 101U-2, 101U-5, & 101U-6). One undesired orientation may betilted as shown in FIG. 3A, such that the gap is non-uniform andundesired and the gap value is not in range AR. However, the gap valueGVU may be within a range MAR of acceptable gap values as describedbelow with respect to Table I. Generally, the range MAR may beacceptable because with the use of the embodiments, the meniscus(identified as 104U in FIGS. 3A & 3B) is allowed to be maintainedstable. This gap 101U is undesired because, without the embodiments, themeniscus 104 may be rendered (or become) unstable as the gap changesfrom uniform to non-uniform.

Generally, in one embodiment a gap value in a DIS range is a gap valueoutside of both the acceptable gap value of range AR and the range MAR,both as described below (Table I). The DIS range is a most undesiredrelative orientation, where “most” is more undesired than the undesiredorientation of the gap 101U. The most undesired relative orientationcorresponds to the meniscus being discontinuous, or separated(identified as meniscus 104DIS in FIGS. 4A & 4B described below). Anexample of a gap value less than a value in the acceptable gap valuerange AR and less than a value in the MAR range is a gap value at anextremely low value, i.e., in which a zero gap value corresponds totouching of the respective head surface 112 and the respective wafersurface 106. The touching renders the meniscus 104DIS discontinuous.Such a discontinuous meniscus is most undesired because the processingmust be stopped when the meniscus 104DIS occurs.

The undesired orientations may be understood by further reference to thecarrier 130. The carrier configuration is shown in FIG. 2A with oppositecarrier sides 132-1 and 132-2. The carrier sides 132-1 and 132-2 definea carrier plane 134 that in the desired orientation is co-planar with(i) one wafer surface 106, and (ii) one wafer plane 107, and is parallelto the axis plane 108 (FIGS. 2D & 2E). Sides 132-1 and 132-2 areadjacent to opposite sides 106-1 and 106-2 of the one wafer surface 106.In an undesired orientation of the head plane 114 relative to thecarrier 130, the head plane 114 is not parallel to the carrier plane 134or to the wafer plane 107 or to the axis plane 108, such that the gapvalues at the sides 132-1 and 132-2 are unequal, indicating existence ofthe undesired, non-uniform gaps 101U (shown as 101U-1 & 101U-2 in FIG.3A).

In more detail, the cross sectional view of FIG. 3A shows one embodimentin an undesired orientation. An exemplary one of the two wafer surfaces106 and the head plane 114 are in the undesired orientation relative toeach other. The X-Y plane is shown for reference as coplanar with thewafer plane 107 (the X axis being shown as dot X). The head plane 114 ofhead 110 is not parallel to the Y axis (i.e., is at an acute angle withrespect to wafer plane 107). The meniscus length LD is shown greaterthan diameter D (FIG. 2A) of the wafer 102. The meniscus 104U extendsbetween the head surface 112 and the wafer surface 106. In a generalsense, the undesired orientation illustrated in FIG. 3A is shown as thehead 110 rotated around the X axis, with the head plane 114 tiltedrelative to the Y axis. The values of the gap 101U are shown includingone or more values other than the uniform value of the gap 101D. Thus,the gap 101U relative to the head 110 is shown with a value 101U-1adjacent to one edge 132-1 of the wafer 102. Value 101U-1 issubstantially smaller than the gap value 101U-2 adjacent to the oppositeedge 132-2 of the wafer 102. With respect to FIG. 3A, this undesiredorientation is referred to as the head 110 being tilted, as if the leftside of the wafer were “hovering” (i.e., tilted up) and the right sideof the wafer were tipped (i.e., tilted down). A tilted undesiredorientation may also be oriented opposite to that shown in FIG. 3A,i.e., as if the right side of the wafer were hovering (i.e., tilted up)and the left side of the wafer were tipped (i.e., tilted down).

The cross sectional view of FIG. 3B shows another embodiment of anundesired orientation. An exemplary wafer surface 106 and head surface112 are in a pitched undesired orientation relative to each other. Theaxes are shown for reference. The wafer surface 106 and plane 107 areshown coplanar with the axis plane 108 (the Y axis being shown as adot). A meniscus width W of the meniscus 104U is shown. In a generalsense, this undesired orientation illustrated in FIG. 3B is shown as thehead 110 rotated around the Y axis, and the head plane 114 pitched fromand not parallel to the X axis. The values of the gap 101U are shownincluding one or more values other than the uniform value of gap 101D.Thus, the gap 101U relative to the head 110 is shown with one value101U-5 and one value 101U-6. Value 101U-6 extends in the Z directionfrom adjacent to a forward up pitched location of the head 110 (shown atthe right) to a forward location on the wafer 102. Value 101U-6 is shownsubstantially larger than the value 101U-5 that extends in the Zdirection from adjacent to a rear down pitched location of the head 110(shown at the left) to a rear location on the wafer 102. Such locationsmay be on the diameter D of the wafer, for example. This undesiredorientation is referred to as the head 110 being pitched up. A pitchedundesired orientation may also be oriented opposite to that shown inFIG. 3B, i.e., with the front side of the head down and the rear side ofthe head up.

With the undesired meniscus in mind, the contrasting desired meniscusstability may be understood. The above-referenced continuousconfiguration of the meniscus is without separation of the meniscus(i.e., without meniscus breakup). FIGS. 2D and 2E show meniscusstability via stable meniscus 104D. For example, in FIG. 2E the lengthLD of the desired meniscus 104D extends in the Y direction across theproximity head 110, past the outer edge of the wafer 102 and onto thecarrier 130. In another example, in FIG. 2D the width W of the meniscus104D extends in the X direction without interruption. In other words,the meniscus 104D is continuous completely across the width W. Also, ineach FIGS. 2D and 2E the meniscus 104D is shown extending continuouslyacross the desired gap 101D in the Z direction. The stability of thedesired meniscus 104D is also indicated by the gap 101D having the gapvalue GVD in the desired range AR.

In contrast to such meniscus stability, details of the unstable meniscus104DIS may be understood by further reference to FIGS. 4A and 4B. FIG.4A shows meniscus 104DIS extending generally in the Y direction in twoseparate parts M1 and M2, and thus in an incomplete configuration,incompletely across the proximity head 110. Only in exemplary part M2does the meniscus 104DIS extend past the outer edge 106-1 of the wafer102 and onto the carrier 130. The Y direction lengths of the separateparts M1 and M2 are thus separate lengths L1 and L2 (FIG. 4A), and notone length LD (i.e., not desired length LD of FIG. 2E that extendscontinuously in one length and completely). In another example, in theplan view of FIG. 4B, meniscus 104DIS is shown extending in the Ydirection with an interruption MO in which the meniscus 104DIS does notexist. In other words, in this example, the meniscus 104DIS in twoseparate parts M1 and M2 is not continuous and is incomplete across thenormal length LD of a desired meniscus 104D. Thus, in each of FIGS. 4Aand 4B the depicted meniscus 101DIS is shown broken up, illustrating theundesired meniscus breakup.

As previously described, Applicants have identified the need formonitoring the value of the gap 101 between the surface 112 of theproximity head 110 and the wafer surface 106 that is being meniscusprocessed to allow the stable meniscus configuration to be maintained.FIGS. 3A & 3B also show one embodiment of the apparatus 109 configuredwith a monitor system 140 for such monitoring. The description belowrefers to one such system 140 on one proximity head 110, it beingunderstood that such description of the one system 140 applies to amonitor system 140 on each of the heads 110 shown in FIG. 2C. Thus,system 140 may include various meniscus monitors 142 mounted on each ofthe proximity heads 110. In one embodiment shown in FIG. 3A, onemeniscus monitor 142-1 may be configured to direct (or transmit) aseparate beam 144-1 (such as a laser beam) onto one of the oppositecarrier sides 132-1, and another meniscus monitor 142-2 may beconfigured to direct (or transmit) a separate similar beam 144-2 ontothe other opposite carrier side 132-2. Each of the meniscus monitors 142may be configured to receive a return, or return beam, 146R of therespective beam 144 from the respective opposite carrier side 132 and togenerate an orientation monitor signal (generally 148). Signals 148-1and 148-2 may be generated by the respective meniscus monitors 142-1 and142-2. For each meniscus monitor 142, the monitor signals 148 representthe returns 146R modified according to the value of the gap 101 at eachrespective first and second carrier side 132-1 & 132-2 as compared tothe respective first and second beams 144. The monitors 142 may, forexample, be a Keyence LK series laser displacement sensor supplied byKeyence Corporation of America. Output orientation monitor signals 148may be calibrated in set up relative to a laser calibration fixturemounted on the same supports on which the heads 110 are show mounted inFIG. 2C. As calibrated, the orientation monitor signals 148 representsthe returns 146R modified according to the value of the gap 101 at eachrespective first and second carrier side 132-1 & 132-2 as compared tothe respective first and second beams 144. The modification, and thusthe values of the orientation monitor signals 148, represent gap valuesthat are according to (i) whether the wafer surface 106, as mounted onthe carrier 130, and the head surface 112 are in the desired orientationwith respect to each other (with the gap 101D having the desired gapvalue GVD, gap 101D being shown in FIGS. 2D & 2E), or (ii) whether thewafer surface 106 and the head surface 112 are in one of the undesiredorientations (e.g., with the gap being the gap 101U having values otherthan the desired value, FIG. 3A, 101U-1 & 101U-2), or (iii) whether thewafer surface 106 and the head surface 112 are in the most undesiredrelative orientation corresponding to the meniscus 104DIS that isdiscontinuous (FIGS. 4A & 4B). In exemplary case (ii), the monitorsignals 148 may represent the returns 146R modified according to the gapvalues of the gap 101U resulting from the above-described exemplarytilting, e.g., of the head surface 112 and the wafer surface 106relative to each other.

As described above, the gaps 101U between the proximity head 110 and thewafer surfaces 106 that are being meniscus processed may also be definedwhen the surface 106 of the wafer 102 and the head plane 114 are pitchedrelative to each other. To allow maintaining proper meniscus processingof the wafer surfaces 106 (e.g. with the stable meniscus 104D), FIG. 3Balso shows that the apparatus 109 is configured for monitoring by anembodiment of the monitoring system 140 that includes other meniscusmonitors 142 mounted on each of the proximity heads 110. The descriptionbelow refers to one such system 140 on one proximity head 110, it beingunderstood that such description of the one system 140 applies to themonitor systems 140 provided each of the heads 110 shown in FIG. 2C.FIG. 3B shows that one meniscus monitor 142-3 may be configured todirect (or transmit) a separate similar beam 144-3 onto a forwardpitched location 102PF on one surface 106 of the wafer 102, and anothermeniscus monitor 142-4 may be configured to direct (or transmit) aseparate similar beam 144-4 onto a rear pitched location 102PR on thatone surface 106 of the wafer 102. Each of these meniscus monitors 142-3and 142-4 may be configured to receive a return 146R of the respectivebeam 144 from the respective location 102PF or 102PR to generate anotherorientation monitor signal 148 in a manner similar to that describedwith respect to FIG. 3A. The modifications of the beams are according towhether the wafer surface 106 and the head surface 112 are orientedrelative to each other in: (i) the desired orientation with the gap 101Dhaving the desired value (shown in FIG. 2D), or (ii) one of theundesired pitched orientations with the gap 101U having values 101U-5and 101U-6 other than the desired value (FIG. 3B), or (iii) one of themost undesired relative orientations corresponding to the meniscus beingdiscontinuous (FIG. 4B). In these pitched examples (ii) and (iii), themonitor signals 148 represent the returns 146R modified according to thevalue of the gap 101 resulting from the above-described exemplarypitching, e.g., of the head surface 112 and the wafer surface 106relative to each other.

The use of orientation monitor signals 148 is described with respect toFIG. 5 that shows the apparatus 109 configured with a processor 150. Theprocessor 150 is configured to respond to the orientation monitorsignals 148 and to a recipe 152. The recipe 152 may be as defined abovefor meniscus processing of a particular type of the wafers 102, forexample. In a general sense, during exemplary meniscus processingoperations on such type of wafer 102, the configured processor 150 mayrespond to such signals 148 and to the recipe 152 for generatingmeniscus monitor signals 153 that correlate to meniscus stability. Withthe signals 153 so correlated to meniscus stability, the signals 153allow the stable configuration of the meniscus 104D to be maintained(i.e., without the meniscus separation shown in FIGS. 4A &4B).

Generally, then, based on the signals 153, during the meniscusprocessing the maintained configuration of the meniscus 104D will be asshown in FIGS. 2D and 2E. Embodiments of the apparatus 109 are describedbelow to illustrate how the signals 153 are correlated to meniscusstability, and how the signals 153 allow the stable configuration of themeniscus 104D to be maintained (i.e., without the meniscus separationshown in FIGS. 4A & B). Generally, Columns 1-3 of Table I above indicateresults of the correlation to meniscus stability. Column 1 identifies acorrelation result of desired meniscus stability, characterized byexistence of the desired gap 101D

TABLE I Column 1 Column 2 Column 3 Desired meniscus Undesired meniscusStop meniscus stability stability process gap 101D Level 2T unstablemeniscus non-uniform gap 104DIS 101U2-T with gap value GVU in acceptablerange GVU-T2 uniform gap value Level 2P Level 3T, with gap GVDnon-uniform gap value GVDIS 101U2-P, with gap value GVU in acceptablerange GVU-P2 Level 1, desired adjust process Level 3P, with gap meniscus104D parameter(s) value GVDIS Data 154-1 Data 154-2 Data 154-3having a desired uniform gap value GVD. Column 1 identifies acorrelation of desired meniscus stability that is characterized by thecontinuous meniscus configuration and the existence of the desired gap101D having a Level 1 of desired uniform gap value GVD. Gap value GVD isin the desired (or acceptable) range AR. GVD may be a gap value that iseither constant, or is changing with respect to time within theacceptable range AR as shown in FIG. 1. For example, the range AR may befrom about 0.1 mm to about 1 mm in a time period of about from tenseconds to ten minutes. It is to be understood that when the gap valueGVD is in the desired range AR, the meniscus 104D does not have atendency to become discontinuous during such time period.

Column 2 identifies a correlation result of a Level 2, that is anundesired meniscus stability. Level 2 is characterized by the existenceof any of many undesired gaps 101U. The gap values of the gaps 101U arein one embodiment of the MAR range (outside the range AR), and referredto as MARPRO (referring to process parameter). However, the gap valuesare such that the meniscus 104U may still be maintained in the stableconfiguration if the embodiments are used to provide such stability byallowing the modifications (or adjustments) described below. This gap101U may be referred to as being configured with gap values to allow themeniscus 104U to be maintained in the stable configuration (orcondition), because the embodiments may be used and such meniscusstability maintained, as described below. Such modifications relate tocertain identified meniscus process parameter PRP values that werespecified in the current recipe 152CR for the meniscus process that isbeing monitored to provide the signals 153. For example, in a Level 2Tcorrelation, a gap 101U2-T identifies a tilt situation in whichnon-uniform gap values GVU-T2 may be in the MARPRO range (outside therange AR), but the meniscus will have the stable configuration whenthose modifications are made to the current recipe. In another example,in a Level 2P correlation, a gap 101U2-P identifies a pitch situation inwhich non-uniform gap values GVU-P2 may be in range MARPRO (outside therange AR), but the meniscus will have the stable configuration whenthose modifications are made to the current recipe. For example,non-uniform gap values GVU-T2 or GVU-P2 of range MARPRO may be above therange AR by from about one mm to about three mm in a time period ofabout from ten seconds to about ten minutes, or may be below the rangeAR by from about 0.1 mm to about 0.3 mm in a time period of from aboutone second to about two seconds, but the meniscus has the stableconfiguration when those modifications are made to the current recipe.Column 2 indicates “adjust process parameters”, and such adjustment isdescribed below with respect to data 154-3.

Column 3 identifies a Level 3 correlation result of a different type ofundesired meniscus stability, and this is the above-described mostundesired relative orientation, where “most” is also more undesired thanthe undesired orientation of the gap 101U. Level 3 is characterized bythe existence of one of many undesired gaps 101DIS across which themeniscus 104 currently is not stable, or currently is imminently notgoing to be stable. In Level 3, the gap 101DIS is such that there is ahigh risk of an immediate discontinuous configuration (i.e., meniscusseparation, FIGS. 4A & 4B). For example, in Level 3 T shown in FIG. 4Athe gap 101DIS-1 identifies a tilt situation that may have a gap valueDIS that is not in either the MAR range or the AR range. In anotherexample, a Level 3P correlation may have a gap value DIS that is not ineither the MAR range or the AR range. The gap value DIS that is not ineither the MAR range or the AR range is referred to as being in the DISrange (referring to discontinuous meniscus). With the exemplary gap101DIS having these non-uniform gap values in the DIS range, there is abasis in each case for immediately interrupting operation of theapparatus 109.

Further considering correlation by the embodiments, in one embodiment ofapparatus 109, the current recipe 152CR may specify the processparameters to provide the desired orientation as comprising the desireduniform gap 101D between the wafer surfaces 106 and the fluid emittersurface 112. In this embodiment, the processor 150 may be configured torespond to the orientation monitor signals 148 for correlating thefollowing input values: (1) a value of the uniform gap 101D (specifiedby the current recipe 152CR), and (2) changes of the value of the gap101D (which changes may be undesirable, changing the gap 101D to gap101U, or most undesirable, changing the gap 101D to gap 101DIS) duringthe meniscus processing. The correlation is to meniscus stability.Generally, the correlation to meniscus stability is via the signal 153output by the processor 150 representing (or identifying) the data 154shown in one of Columns 1-3 of Table I. In this general sense, theidentified data 154 in the Column indicates the result of thecorrelation to meniscus stability.

In more detail, the processor 150 correlates those input values (gap andchange in gap) with stability of the meniscus 104 for generating themeniscus monitor signals 153. When Column 1 data 154-1 is identified,the signals 153 indicate that the meniscus processing may continuebecause of the existence of the desired (stable) meniscus 104D.

In another embodiment, the processor 150 also correlates those inputvalues with stability of the meniscus 104 by generating the meniscusmonitor signals 153 to identify Level 2T data (of Column 2). In thiscase, the signals 153 comprise data 154-2 representing a quantitativeadjustment amount of an identified one or more of the process parametersPRP. The identified process parameters PRP are those of the processparameters PRP that are to be adjusted to allow the stable meniscus 104Uto be maintained. This adjustment of the parameters PRP is from (i) thevalues that were specified in the current recipe 152CR for the meniscusprocess, to (ii) values determined by the processor 150 as describedbelow, and may apply to one or both of the tilt and pitch situations.

In another embodiment, the processor 150 also correlates those inputvalues with stability of the meniscus 104 for generating the meniscusmonitor signals 153 to identify Level 3 data (of Column 3). When Column3 data is identified, the signals 153 comprise data representing gaps101DIS-1 and 101DIS-2 that are a basis for the above-described exemplaryimmediate interruption of the operation of the apparatus 109, and mayapply to one or both of the tilt and pitch situations.

Embodiments of the apparatus 109 illustrate how the signals 153 allowthe stable meniscus 104 to be maintained. Table II below indicatesexemplary process parameters PRP related to such allowing. The Table IIprocess parameters PRP may be specified by the current recipe 152CR andapplied to a meniscus process module 109MP of the processor 150 forprocess control. At the start of processing, the original processparameters PRP specified by such current recipe 152CR may be referred tobelow as “OPP” to distinguish from modifications of the parameters PRPthat may occur later during processing. In detail, these processparameters PRP may be adjusted (or modified) by the processor 150 toallow the stability of the meniscus 104U to be maintained. Referringagain to FIG. 5, the recipe-specified process parameters PRP are appliedto meniscus process module 109MP of the apparatus 109. The wafers 102may initially be processed according to the OPP versions of the processparameters PRP, and the process under current recipe 152CR is monitoredby the meniscus monitors 142. Monitors 142 generate the signals 148according to the orientation of the wafer and the head relative to eachother (e.g., Levels 1-3, Table I). In response to the current recipe152CR, and to the orientation monitor signals 148, the processor 150generates the meniscus monitor signals 153. In one exemplary embodimentcorresponding to Level 2, Table I, the signals 153 provide the data154-2 to represent a quantitative adjustment amount(s) of an identifiedone or more of those specified process parameters PRP. Thus, theexemplary data 154-2 may identify the one or more of the parameters PRPthat are to be adjusted to allow the configuration of the meniscus 104Uto be maintained stable. One example of the identified adjustment isillustrated when the carrier 130 is tilted (as defined above). Thisadjustment of the identified meniscus process parameters PRP is from (i)the values of the OPP that were originally specified in the currentrecipe 152CR for the meniscus process module 109MP to use in themeniscus processing, to (ii) values determined by the processor 150 andembodied in the data 154-2. The purpose of the adjustment is to renderthe meniscus 104U stable and assure that the continuous configuration ofthe meniscus continues during further meniscus processing of the wafers102. The identification by the data 154-2 of the signals 153 may, forexample, allow different pressures (e.g., greater) to be at locationsthat correspond to a larger value of the gap 101U, and may allow thedifferent pressures (e.g., lower) at locations that correspond to asmaller value of the gap 101U-1. One skilled in the art may understandthat the data 154-2

TABLE II Exemplary Process Parameters PRP Identified and specifiedprocess Quantitative parameters PRP. adjustment amount 1. pressure atwhich the fluid is supplied quantitative from the proximity head 110into the gap adjustment amount of 101; pressure 1 2. pressure at whichthe fluid is collected quantitative from the gap 101; adjustment amountof pressure 2 3. the velocity of the wafer movement (e.g., quantitativein the X direction) relative to the proximity adjustment amount of head110; velocity 3 4. timing of velocities of such wafer quantitativemovement relative to the proximity head adjustment amount for 110;timing 5. locations at which the fluid is supplied quantitative into thegap 101, e.g., locations that are adjustment amount for relative to thelocations of the meniscus locations monitors 142, such as along the Yaxis; and 6. the locations at which the fluid is quantitative collectedfrom the gap, e.g., locations along adjustments amount for the Y axis.locations2 may specify the value of the quantitative adjustment of a processparameter PRP in the same manner as the recipe 152 specifies theoriginal process parameters OPP.

In one embodiment, the data 154-2 of signal 153 may be output on aprocessor display 156 to present the quantitative adjustment values.Based on the displayed data 154-2, entries may be made by processpersonnel via I/O such as a keyboard 158 to apply modified parametersPRPM to the process module 109MP. In another embodiment, the data 154-2may be applied to the process module 109MP by anallow-meniscus-stability program 150S. In yet another embodiment, themodified process parameters PRPM and the unmodified process parametersPRP from the current recipe 152 may be referred to as a modified recipe152MR (FIG. 7). In each embodiment, the wafers 102 are then processed inresponse to (i) the modified process parameters PRPM applied by themodule 109MP and (ii) applicable unmodified process parameters OPP fromthe original current recipe 152CR. The meniscus monitors 142 continue tooperate and to generate more of the signals 148. In response to theunmodified and modified process parameters of the exemplary modifiedrecipe 152M, and to the current orientation monitor signals 148, theprocessor 150 continues to generate the meniscus monitor signals 153.

The apparatus 109 may be further configured for operation in a set-upmode with no supply of the fluid into the gap 101 and no collection ofthe fluid from the gap 101. In the set-up mode the orientation monitorsignals 148 collectively indicate whether the head plane 114 is orientedrelative to the wafer surfaces 106 and to carrier plane 134 in thedesired or in the undesired orientation for a particular recipe 152NCRthat is to be used next in meniscus processing. In one embodiment, therecipe 152NCR may be for meniscus operations in response to the currentrecipe 152CR, where those operations were immediately interrupted inresponse to the signals 153-3 (Table I). In this situation, theorientation monitor signals 148 indicated the most desired relativeorientation between the head and the wafer. In another embodiment, therecipe 152NCR may be a new recipe 152 for a different type of wafer 102.In each case, the specification of the recipe 152NCR includes a gap 101and a gap value GVN. The carrier 130 and wafer 102 are moved in the Xdirection relative to the head 110. The relative orientation of thecarrier and wafer are monitored by the system 140 as described above,and monitor signals 148 are output to the processor 150. The processor150 is further configured to respond to these orientation monitorsignals 148 in the set-up mode and to the gap value GVN of the nextrecipe 152NCR for generating a set-up signal 140 defining at least onequantitative adjustment amount QAA by which the head 110 is to beadjusted relative to the carrier 130 if the gap 101 in set up does nothave the value GVN of the gap 101 specified in the recipe NCR. By theQAA, an adjustment of the arrays 162 of adjusters 163 described belowmay be made for set up so that the head 110 is adjusted relative to thecarrier 130 and to the wafer 102, and is thus properly set up for themeniscus processing per the next recipe NCR to allow meniscus separationto be avoided and the meniscus 104 to be stable.

As described above, the signals 153-3 indicate that the meniscusprocessing is to be immediately interrupted. On stopping the meniscusprocessing, or before a new recipe 152NCR is used to meniscus process anew type of wafer, set up is performed. For set up, FIG. 6A shows thearray 162 of the adjusters 163. FIG. 6A shows one such head 110, theupper head 110, which is also exemplary of the lower head 110. Theexemplary proximity head 110 embodies physical parameters PHP foradjustment by being configured with the array 162 of the adjusters 163to facilitate the adjustment of the head 110 relative to the carrier130. The adjusters 163 may be used for adjustment of each of theabove-described tilt and pitch, including separately for each or both atthe same time. Such tilt is a rotation of the proximity head 110 on(i.e., around) the X axis. Such pitch is a rotation of the proximityhead 110 on (i.e., around) the Y axis.

The proximity head 110 may be adjusted so that the plane 114 of the head110 may become less tilted and/or less pitched relative to the plane 134of the carrier 130 and relative to the plane 107 of the wafer 102. Toappreciate these changes in the tilt and pitch, FIG. 6B shows that inthis embodiment a stepped opening 164 may be provided in a plate 166 ofthe carrier 130 to receive the wafer 102. Plate 166 may be provided withsupport pins 168 to engage the edge of the wafer 102 and hold the waferwith the surfaces 106 co-planar with the carrier plane 134. FIG. 6Ashows the wafer plate 166 configured with a generally rectangularperimeter, and the perimeter configured with an outer side edge 170 oneach opposite side 132-1 and 132-2. FIG. 6B shows each side edge 170received in a rail 172 of a track 174. The rails 172 may extend in the +and −X direction relative to the proximity head 110, and are spaced inthe Y direction to accommodate the width of the carrier plate 166. Therails 172 extend parallel to the X axis for guiding the respective edge170 of the carrier 130 in the described + and −X direction movementrelative to the head 110.

FIG. 6A also shows one embodiment of the apparatus 109 for use in theinitial set up for a new type of wafer, or upon immediate interruptionof the meniscus processing. Each corresponding (upper and lower)proximity head 110 is configured with an embodiment of the physicalparameter PHP useful for both tilt and pitch adjustment relative to thecarrier 130. For the adjustments, the exemplary upper proximity head 110is configured with the array 162 of the adjusters 163 to permit headorientation adjustment relative to the carrier 130 that is guided by thetrack 174. Embodiments of the array 162 are first described with respectto tilt, and then with respect to pitch. FIG. 6A shows a general layoutfor tilt and pitch adjustment of the proximity head 110 by the array 162configured with the adjusters 163. Adjusters 163-1 and 163-2 are mountedon opposite faces 179-1 and 179-2 of the proximity head 110, and areshown spaced along rail 172-1 in the X direction. Adjusters 163-3 and163-4 are also mounted on opposite respective faces 179-1 and 179-2 ofthe proximity head 110 and are shown spaced along opposite rail 172-2 inthe X direction. FIG. 6B shows that each adjuster 163 is mounted on aframe 176 that extends between the rails 172 (e.g., 172-1 & 172-2) ofthe track 174. Adjusters 163-1 and 163-3 are on the −X side of the head110, and adjusters 163-2 and 163-4 are on the +X side of the head 110.The adjusters 163-1 and 162-2 are also configured to work in unison andtogether raise, or together lower, side 178-1 of the head 110 relativeto the plane 134 of the carrier 130 (e.g., for tilt adjustment). Theadjusters 163-3 and 162-4 are also configured to work in unison in thesame Z direction and together raise, or together lower, an opposite side178-2 of the head 110 relative to the plane 114 of the carrier 130(e.g., for tilt adjustment). The adjusters 163-1 and 163-3 are alsoconfigured to work in unison in the same Z direction and together raiseor lower one face 179-1 to change the orientation of the head 110relative to the plane 134 of the carrier 130 (e.g., for pitchadjustment). The adjusters 163-2 and 163-4 are also configured to workin unison in the same Z direction and together raise or lower the otheropposite face 179-2 to change the orientation of the head 110 relativeto the plane 134 of the carrier 130 (e.g., for pitch adjustment). Theexemplary four adjusters 163 are also configured for combined adjustmentof both tilt and pitch.

As an example of tilt adjustment, adjusters 163-1 and 163-2 may both bemoved up by the same amounts to raise the side 178-1 of the head 110 andchange the tilt of the head plane 114 relative to the carrier plane 134.This may change the tilt shown in FIG. 4A, for example. In anotherexample, it may be necessary to make more adjustment to change the tiltof FIG. 4A. Thus, in addition to the described movement of adjusters163-1 and 163-2 up, adjusters 163-3 and 163-4 may both be moved down tolower the opposite side 178-2 and change the tilt of the head plane 114relative to the carrier plane 134. The described adjustment of the fourof the adjusters 163 may, for example, result in the tilt shown in FIG.3A, and then further adjustment may equalize all of the gaps 101U-1through 101U-4, which is an adjustment into the uniform gap situation toobtain the uniform gaps 101D. Opposite tilt would require oppositeadjustment of adjusters 163.

As an example for adjusting pitched up orientation (see FIG. 4A showingthe front face 179-2 of head 110 pitched up relative to rear face179-1), FIG. 6A shows that adjusters 163-2 and 163-4 may both be moveddown to lower the front face 179-2 on the +X side of the head 110 andchange the pitch of the head 110 relative to the carrier 130. This maychange the pitched up orientation toward the desired pitch shown in FIG.3B, for example. In another orientation, additional adjustment may berequired. For example, to change the front face up pitch of FIG. 4A, inaddition to the described down movement of adjusters 163-2 and 163-4,adjusters 163-1 and 163-3 may both be moved up to raise the rear face179-1 on the −X side of the head 110. These adjustments may change therelative pitch of the carrier plate 162 and the head plane 114 by, forexample, equalizing the gaps 101U-1 through 101U-4, which again is intothe uniform gap situation with gap 101D (FIG. 2D). Opposite pitch (i.e.,front face down pitch) would require opposite adjustments of adjusters163.

One exemplary specific configuration of the array 162 is with theadjusters configured as shown in FIG. 6B (an exemplary adjuster beingshown as 163-M1). For ease of illustration, the adjuster 163-M1 of FIG.6B is illustrated only in terms of one side 178, e.g., side 178-1, andonly in terms of one face 179, e.g., the −X face 179-1. It is to beunderstood that the adjuster 163-M1 may also be provided at the oppositefront face 179-2 at side 178-1, and at the opposite side 178-2 at eachface 179 (FIG. 6A). Each adjuster 163-M1 may be mounted at each suchlocation, and may be configured as shown in FIG. 6B. The frame 176 isshown and extends from side 178-1 to side 178-2 under the respectiveadjusters 163. An adjustment unit 180 is mounted on the frame 176. Inthe embodiment 163-M1 of adjuster 163, the unit 180 may be configuredfor example for manual operation, as by a screw 163-S and a nut 163-N,and is referred to as unit 180-1. Screw 163-S is mounted on the frame176, held against Z direction motion and free to rotate, while nut 163Nis secured to the head 110 not free to rotate, but configured to movethe head 110 up and down. Turning of the screw 163-S relative to theframe 176 causes the screw 163-S (threaded in the nut 163-N fixed to thehead 110) to move up or down according to the rotational direction ofthe screw, for example. With the nut 163-N fixed to the head 110, andwith the screw 163-S held to allow rotation (but not Z direction motion)relative to the frame 176, rotation of screw 163-S adjusts the verticalposition of the nut 163-N, and thus of the head 110, relative to theplate 166, and thus relative to the wafer 102.

TABLE III Exemplary Physical Parameters PHP: Data 140D Identified andspecified physical Quantitative parameters PHP adjustment amount 1.tilt: adjust gap value of gaps 101U-1 & quantitative 101U-3 adjustmentamount of gap value 2. tilt: adjust gap value of gaps 101U-2 &quantitative 101U-4 adjustment amount of gap value 3. pitch: adjust gapvalue of rear gaps quantitative 101U-5 & 101U-7 adjustment amount of gapvalue 4. pitch: adjust gap value of front gaps quantitative 101U-6 and101U-8 adjustment amount of gap value 5. adjust all gaps in items 1 and2 quantitative adjustment amount of gap values 6. adjust all gaps initems 3 and 4 quantitative adjustment amount of gap values

Referring to Table III, the set-up signals 140 may include data 140D.Exemplary data 140D may include the identified and quantitative amountsof specified ones of the physical parameters PHP that are required tomake an adjustment of tilt or pitch. The data 140D of Table III may beaccessed, for example, by reference to the display 156 (FIG. 5), and theappropriate quantitative adjustment amount, or amounts, may be used toguide the adjustment of the appropriate adjusters 163 as described abovefor the indicated tilt or pitch situation. Thus, having the quantitativeadjustment amount or amounts from the display 156, and with the screw163-S held against Z motion, rotation of the screw 163-S in anappropriate direction facilitates adjustment of the vertical position ofthe head 110, e.g., of the face 179 and/or side 178, as described aboveto adjust tilt or pitch or both tilt and pitch. Such adjustments may beappreciated by reference again to FIG. 4A in which one undesiredorientation of the wafer surfaces 106 is shown. The adjusters 163facilitate adjustment of the vertical position of the head 110 relativeto the carrier 130. According to the data 153-3 for the tilt situation,the illustrated tilt of the wafer 102 may thus be reduced into theorientation shown for example in FIG. 2E in which the gap 101D isuniform and desired, allowing the stable meniscus 104D to be maintained.The amount of the adjustment will conform, for example, to that shown inTable III, items 1 and/or 2, corresponding to data 140D of the set-upsignal 140. Alternatively, according to the pitch data of set-up signal140, the illustrated pitch of the wafer 102 may thus be reduced, asshown for example in FIG. 2D in which the gap 101D is uniform anddesired, allowing the stable meniscus 104D to be maintained. The amountof the adjustment will conform, for example, to that shown in Table III,items 3 and/or 4, corresponding to the data 140 of the set-up signal 153for pitch.

Another specific configuration of the adjusters of array 162 is shown inFIG. 6C as adjuster 163-A1. FIG. 6C shows the head 110 configured withthe physical parameter for adjustment of the head 110 relative to thecarrier 130, which may be for tilt or pitch adjustment. That is, thephysical parameter is the relative orientation of the plane 134 of thecarrier 130 and the plane 114 of the proximity head 110. As describedwith respect to FIG. 6B, for ease of illustration the FIG. 6C embodimentof adjuster 163-A1 is illustrated only in terms of the side 178-1 andone face 179-1. It is to be understood that an adjuster 163-A1 may beprovided at each side 178 and each face 179, i.e., as shown by adjusters163 in FIG. 6A. In set-up, adjusters 163-A1 may each directly respond tothe set-up signals 1430, through the program 150S. FIG. 6C showsadjusters 163-A1 configured with an embodiment of exemplary unit 180,referred to as unit 180-2, in lieu of the unit 180-1 of FIG. 6B. Unit180-2 may be configured with a pneumatic adjuster in which a piston163-P moves in a cylinder 163-C in response to the data 154-3 of signals153. The cylinder 163-C may be mounted on the frame 176 and the piston163-P may be secured to the head 110 to adjust the vertical position ofthe side 178-1 and face 179-1 of the head 110 relative to the carrier130. In a manner similar to the tilt and pitch adjustments describedwith respect to FIGS. 6A & 6B, the amount of adjustment by the unit180-2 at each side 178-1 and face 179-1 may be controlled (here directlyby the data 140D of the signals 149) to adjust the orientation of thecarrier plane 134 and the wafer plane 107 relative to each other asdescribed above during set-up.

It may be understood then, that in both of the FIGS. 6B & 6C exemplaryembodiments of the array 162, the described configurations of the head110 include physical parameters for adjustment of the head 110 relativeto the carrier 130 to avoid the tilt or the pitch. In this manner, thehead plane 114 at each opposite side 178-1 and 178-2 of the head 110 maybe spaced relative to the carrier plane 114 by the same values of thegap 101D. Also, the described configuration of the processor 150generates the set-up signals 140 (that are similar to the meniscusmonitor signals 153, except for the set-up conditions) so that the data140 represents the quantitative adjustment amounts of the tilt or pitchat the opposite head sides 178 and faces 179 as separate identifiedphysical parameters. The quantitative tilt adjustment amounts at eachside 178 and face 179 allow the carrier and wafer to be moved into thedesired relative orientation, i.e., the orientation with a uniform gap101D that is specified by the next recipe 152 NCR that is to be used forthe meniscus processing.

In review, FIG. 5 shows processor 150 configured to respond to theorientation monitor signals 148 and to the recipe 152. During exemplarymeniscus processing operations on a wafer 102, the configured processor150 responds to such signals 148 and to the current recipe 152CR thatthe apparatus 109 is currently running (i.e., executing). Such currentrecipe 152CR specifies the original process parameters OPP. As generallydescribed above, the processor 150 generates meniscus monitor signals153 that correlate to meniscus stability. With the signals 153 socorrelated to meniscus stability, the signals 153 allow the stableconfiguration of the meniscus 104 to be maintained as described in moredetail below.

Still referring to FIG. 5, embodiments of the apparatus 109 operate tocorrelate the signals 153 to meniscus stability in the following mannerwith respect to a current meniscus process. The processor 150 is shownin FIG. 5 configured to store the current recipe 152CR (with the currentOPP) to provide one of the inputs for the correlation of the current gapvalue(s) of the current gap 101. The current signals 148 are input withthe current recipe 152CR for correlation to meniscus stability. FIG. 5shows the processor 150 configured with a correlation module 186, shownin more detail in FIG. 7. Referring to FIG. 7, a CPU 150C of theprocessor 150 executes the correlation module 186 to access a database188 that stores a matrix 190. Matrix 190 comprises a list of gap valuesand corresponding process parameters NSPP, as shown in Table IV.

TABLE IV MATRIX 190 Gap Values Known to Correspond to Process ParametersProviding a Stable Meniscus In MAR Range Calibration (stable): ProcessGap Value Recipe 152CAL Parameters NSPP T 1 CAL1 VT1 T 2 CAL2 VT2 P 1CAL3 VP1 P 2 CAL4 VP2 TP 1 CAL5 VTP1 TP 2 CAL6 VTP2

Table IV lists various exemplary gap values. Also, corresponding to eachgap value Table IV gives an identification of a calibration recipe (ormatrix recipe) 152CAL and an identification of process parameters(referred to as “NSPP”, for New Stable Process Parameters) specified bythe recipe 152CAL. In detail, for many gap values (as exemplified by thegap values listed in Table IV), it has been determined (by thecalibration described below) that certain values of certain processparameters NSPP are known to provide a stable meniscus. For each gapvalue, Table IV identifies the calibration recipe 152CAL that specifiesthose certain values of the NSPP. As an example, gap value T1 may relateto a tilt orientation, parameters VT1 may identify the processparameters NSPP known to provide a stable meniscus for that gap valueT1, and the corresponding calibration recipe 152CAL is CAL1. The otherexemplary gap values of Table IV may relate to another tilt orientation(T2), or to one pitch orientation (P1), or to another pitch orientation(P2), or to a tilt and pitch orientation (TP1), or to another tilt andpitch orientation (TP2). It may be appreciated that for a particularconfiguration of the apparatus 109, a table similar to Table IV mayidentify other gap values within the scope of the above description, andthose other gap values will have been determined (by the calibrationdescribed below) to provide the stable meniscus 104D when used withcertain values of certain process parameters NSPP that correspond to arecipe 152CAL that is identified in that table.

Thus, if the current signals 148 represent a gap 101U with a gap valuethat is listed in Table IV, for that gap value there is a calibrationrecipe 152CAL with a set of process parameters NSPP for meniscusprocessing wherein the meniscus 104 will be stable. Based on matrix 190(as exemplified by Table IV), the processor 150 running the correlationmodule 186 identifies the calibration recipe 152CAL that corresponds to(i.e., specifies) the current gap 101U. For that identified recipe152CAL, the module 186 identifies the corresponding NSPP. As indicated,identified recipe 152CAL (with the corresponding NSPP) is known toprovide a stable meniscus 104 for that gap 101U. The processor 150running the correlation module 186 then compares the NSPP to the OPP,and for each OPP that is different from a corresponding NSPP, outputsone of the quantitative adjustment amounts (“QAA”) shown in Table II. Inone embodiment, the processor 150 running the correlation module 186then uses the QAA to modify the current recipe 152CR to become amodified recipe 152MR. Recipe 152MR is written to a modified recipedatabase 192. The modified recipe 152MR may thus include (i) unmodifiedOPP of the current recipe 152CR, (ii) values of those OPP, (iii) anidentification of each NSPP, and (iv) a value of each identified NSPP.For the values of each identified NSPP, the processor 150 running thecorrelation module 186 determines the difference between the value ofthe NSPP and the value of the corresponding OPP, the difference is theQAA for that NSPP, and the difference may be used to adjust the value ofthe corresponding OPP to the value of the NSPP. The recipe 152MR thusrepresents the result of the correlation, and with the apparatus 109using the recipe 152MR (with the values of the unmodified OPP plus thevalues of the NSPP), the signals 153 output by the processor allowadjustment of only the NSPP for the meniscus 104U to be maintained inthe stable configuration.

For such correlation, FIG. 7 shows the correlation module 186 of theprocessor 150 configured with correlation instructions, i.e., a computerprogram 194. A flow chart 200 shown in FIG. 8A indicates operations of amethod under the control of the instructions 194. The method may movefrom start to an operation 202 of responding to the current recipe 152CRand to the orientation monitor signals 148. Operation 202 may includereceiving inputs from the monitors 142, and OPP input from the recipe152CR. The method moves to an operation 204 of determining whether thegap 101 is a desired gap 101D or not. In operation 204, reference ismade to the current recipe 152CR to determine if the current gap valueis GVD as specified in the recipe 152CR. A “yes” determination, i.e.,GVD is in range AR, is thus desired. A no determination indicates not asso specified (i.e., GVD is out of range AR). From a yes determination, aloop 206 is taken and operation 202 is repeated for the current recipe152CR. From a no determination, the method moves to operation 208.Operation 208 makes a determination as to whether the gap value of thecurrent gap 101 is in the MAR range. In terms of Table I, for example, adetermination of “no” means that the gap value of the current gap 101 isoutside both of the AR and MAR ranges, and thus corresponds to a Column3, Level 3T or Level 3P situation. For all gap values not in one of theAR range and the MAR range (i.e., “no” in operation 208), the intendedallowing must not occur because of imminent wafer touching the head 110,for example. For this “no” determination in operation 208, the methodmoves to an operation 210 to stop the processing of the wafers 102. Thisdetermination is accompanied by processor 150 outputting the signals 153with data 154-4 (Table I) to cause the process stoppage.

If a “yes” determination is made in operation 208, the undesired gap101U is thus determined to exist because, although the gap value is notin the AR range, it is in the MAR range. In terms of Table I, the gapvalue thus corresponds to an exemplary Column 2, Level 2T or Level 2Psituation, and the method moves to an operation 212. In operation 212,the meniscus 104 is allowed to be maintained in a stable configuration,and the continuous configuration described above with respect to FIGS.2D and 2E continues, and the method is done.

FIG. 8B shows a flow chart 214 illustrating how operation 212 mayperform the described allowing. From operation 208, in suboperation 216the processor 150 running the correlation module 186 identifies the onecalibration recipe 152CAL that corresponds to the current gap 101U (gap101U being represented by the current orientation monitor signal 148).“Corresponds to” indicates that the recipe 152CAL specifies a gap valueequal to the gap value of the current gap 101U. For that identifiedrecipe 152CAL, the method moves to suboperation 218 and identifies thecorresponding NSPP, i.e., the NSPP specified by recipe 152CAL. Referencemay be made to matrix 190 for this identifying of the correspondingNSPP. Table IV illustrates data for performing both suboperations 216 &218, in that a gap value T1 (indicating tilt within the MAR range) hasNSPP values shown as VT1. This may be referred to as an initial aspectof correlating the current gap 101U to a meniscus 104 that is stable forthat gap 101U. The processor 150 running the correlation module 186 thenmoves to operation 220, and obtains an output by comparing those NSPP(of VT1) to the corresponding OPP of the current recipe 152CR. For eachOPP that is different from a corresponding NSPP, operation 220 outputs aquantitative adjustment amount (“QAA”) indicating the difference, suchthat the modified recipe 152MR is obtained. The processor 150 runningthe correlation module 186 then moves to suboperation 222, and uses themodified recipe 152MR to allow the meniscus 104 to be maintained stableduring further meniscus processing. In operation 222, the processor 150writes the recipe 152MR to the modified recipe database 192. The use ofthe modified recipe 152MR is via the next current signals 153 from theprocessor 150 (representing the modified recipe 152MR). The method offlow chart 214 may thus be done.

FIG. 5 was described above in terms of the data 154 of signal 153applied to the process module 109MP by the allow-meniscus-stabilityprogram 150S. The allow-meniscus stability program 150S may be executedby the processor 150 to perform an embodiment of a method shown in FIG.8C of monitoring meniscus processing of a wafer surface to maintain ameniscus in a stable condition. The method is shown in flow chart 250,and may monitor the meniscus processing by the meniscus 104 of the wafersurface 106 to maintain the meniscus 104 in the stable conditiondescribed above. The processing is in response to the current recipe152CR that specifies the desired gap 101D between the wafer surface 106and the proximity head 110. The current recipe 152CR may further definethe process parameters OPP for the meniscus processing using thespecified gap 101D. Flow chart 250 indicates operations of the methodthat may be under the control of instructions of the correlation program186 and of program 150S. The method may move from start to an operation252 of determining whether a current gap is other than a desired gapdesired gap and is configured with gap values to allow the meniscus tobe maintained in the stable condition. The determining may be bymonitoring of the meniscus processing via the system 140, for example,and by the processor 150 running the correlation instructions 194 todetermine whether the current gap, e.g., gap 101, is other than thedesired gap 101D, e.g., is other than as shown in FIG. 2E. As describedabove, such determination may be that the current gap 101 is not desiredbecause the gap 101 is the gap 101U, thus the current gap is other thandesired.

Another aspect of the determination is whether the current gap isconfigured with gap values to allow the meniscus to be maintained in thestable condition. If the gap is a gap 101DIS, the answer is no, and apath is taken to operation 254. In one embodiment, operation 254 may besimilar to operation 210 (FIG. 8A) and the processing is stopped.

A determination that the current gap 101 is gap 101, is as describedabove a determination that the current gap is configured with gap valuesGVU to allow the meniscus 104U to be maintained in the stable condition(e.g., meniscus 104U as shown in FIGS. 3A and 3B). Thus, gap 101U isneither gap 101D nor gap 101DIS. This is a yes determination ofoperation 252, and the method moves to operation 256.

Operation 256 identifies (i) a calibration recipe that specifies thecurrent gap and (ii) calibrated process parameters for use inestablishing a stable meniscus across the current gap. Operation 256 maybe performed, and if the current signals 148 represent a gap 101U with agap value that is listed in Table IV, for that gap value there is acalibration recipe 152CAL with a set of process parameters NSPP formeniscus processing wherein the meniscus 104 will be stable. Based onmatrix 190 (as exemplified by Table IV), in operation 256 the processor150 running the correlation module 186 identifies the calibration recipe152CAL that has a gap value that corresponds to the current gap 101U.For that identified recipe 152CAL, the module 186 identifies thecorresponding NSPP. In one embodiment, operation 256 may includesuboperation 216 (FIG. 8B) in which the processor 150 running thecorrelation module 186 identifies the one calibration recipe 152CAL thatcorresponds to the current gap 101U (gap 101U being represented by thecurrent orientation monitor signal 148). The recipe 152CAL specifies agap value equal to the gap value of the current gap 101U. For thatidentified recipe 152CAL, operation 256 may also include suboperation218 and identify the corresponding NSPP, i.e., the NSPP specified byrecipe 152CAL. Reference may be made to matrix 190 for this identifyingof the corresponding NSPP. The method may move from operation 258 to anoperation 256 of automatically adjusting the process parameters of thecurrent recipe to the process parameters of the identified calibrationrecipe. In operation 258 the execution of the allow-meniscus stabilityprogram 150S by the processor 150 may obtain an output in the form ofsignal 153 with the data 154. Data 154 is obtained by comparing the NSPPspecified by the identified recipe 152CAL to the corresponding OPP ofthe current recipe 152CR. For each OPP that is different from acorresponding NSPP, operation 258 outputs a quantitative adjustmentamount (“QAA”) indicating the difference, such that the modified recipe152MR is obtained and is output as the signal 153. The method then movesto operation 260, and continues the meniscus processing of the wafersurface using the process parameters specified by the identifiedcalibration recipe. In operation 260, the allow-meniscus stabilityprogram 150S uses the modified recipe 152MR to input the modifiedparameters PRPM to the meniscus process 109MP. The process 109MPresponds to the modified parameters PRPM in the same manner as process109MP responds to the OPP specified by the original (or current) recipe152CR that has been modified, except that the parameters PRPM that havebeen modified change the process conditions so that the meniscus 104U isstable even though the meniscus 104U has the gap value 101GVU that isless desired than gap value GVD. In one embodiment, the method may bedone.

One embodiment may provide a method for calibrating apparatus forprocessing surfaces of the wafer using the meniscus. The processing,e.g., may be of the surface 106 of the wafer 102 using meniscus 104. Theapparatus may be apparatus 109 including carrier 130, proximity head110, system 140, and processor 150, for example. The above set up may beused to set up the proximity head 110 with a series of tilt values, thenpitch values, then combined tilt and pitch values, all for undesiredvalues GVCAL of the undesired gaps 110U. The gap value GVCAL for eachset up is recorded. For each such value GVCAL, a determination is madeof a complete set of process parameters PPCAL by which the meniscus 104is stable (i.e., in the continuous configuration) even though the gap isnon-uniform and thus less desired than gap 101D. Stability of themeniscus may be determined by a meniscus observation described above.Such observation may, for example, determine that, over a time periodthat is in the range described above with respect to range MARPRO, themeniscus is stable (i.e., remains as shown in FIGS. 3A and/or 3B). Thatset of process parameters PPCAL and that value GVCAL are identified forone calibration recipe 152CAL. This process of making recipes 152CAL isrepeated with respect to many tilt, pitch & and combinationconfigurations until a full series of calibration recipes 152CAL isobtained for a wide range of less desired gaps 101U. Data for suchrecipes 152CAL is entered in the matrix 190 for use as described above,and the data may be arranged as in Table IV.

In review, in the calibration, the entry into the database 188 of therespective gap value data GVCAL corresponding to use of each recipe152CAL provides the desired gap value data GVCAL based on actual use ofthe apparatus 109 and of the recipe 152 that is to be used forprocessing multiple other wafers 102 with a stable meniscus 104.

It may be understood, then, that the embodiments fill the above need bymonitoring processing of the surfaces 106 of the wafer 102 by therecipe-controlled meniscus 104. The processor 150 configured forresponse to orientation monitor signals 148 allow maintaining meniscusstability, as defined above. The orientation monitor signals 148 allowthis meniscus stability by maintaining the meniscus configuration in onecontinuous length (FIGS. 2D & 2E) between process monitoring beams 144and extending continuously across the gap 101D between the fluid emittersurface 112 of the proximity head 110 and the wafer surface 106. Theneeds are further filled by the above-described calibration data (TableIV) that defines recipes 152CAL corresponding to the stable meniscus104. In meniscus processing using the current recipe 152CR,identification of an undesired gap 101 is correlated to such calibrationdata to allow meniscus processing to be maintained (i.e., continue) witha stable meniscus 104 in the various ways described above. By fillingthese needs, the system 109 avoids damage to the wafer 102 due to thehead 110 touching the wafer, while allowing the wafer diameter D to belonger in the Y direction and allowing the relative movements betweenthe wafer 102 and the head 110 in the X direction to be at an increasedrate, for example.

For more information on the operation of the meniscus process module109MP, e.g., for the formation of the meniscus 104 and the applicationof the meniscus to the surface of a substrate, reference may be made to:(1) U.S. Pat. No. 6,616,772, issued on Sep. 9, 2003 and entitled“METHODS FOR WAFER PROXIMITY CLEANING AND DRYING,”; (2) U.S. patentapplication Ser. No. 10/330,843, filed on Dec. 24, 2002 and entitled“MENISCUS, VACUUM, IPA VAPOR, DRYING MANIFOLD,” (3) U.S. Pat. No.6,998,327, issued on Jan. 24, 2005 and entitled “METHODS AND SYSTEMS FORPROCESSING A SUBSTRATE USING A DYNAMIC LIQUID MENISCUS,” (4) U.S. Pat.No. 6,998,326, issued on Jan. 24, 2005 and entitled “PHOBIC BARRIERMENISCUS SEPARATION AND CONTAINMENT,” and (5) U.S. Pat. No. 6,488,040,issued on Dec. 3, 2002 and entitled “CAPILLARY PROXIMITY HEADS FORSINGLE WAFER CLEANING AND DRYING,” each is assigned to Lam ResearchCorporation, the assignee of the present application, and each isincorporated herein by reference.

For additional information regarding the functionality and constituentsof Newtonian and non-Newtonian fluids, reference can be made to: (1)U.S. application Ser. No. 11/174,080, filed on Jun. 30, 2005 andentitled “METHOD FOR REMOVING MATERIAL FROM SEMICONDUCTOR WAFER ANDAPPARATUS FOR PERFORMING THE SAME”; (2) U.S. patent application Ser. No.11/153,957, filed on Jun. 15, 2005, and entitled “METHOD AND APPARATUSFOR CLEANING A SUBSTRATE USING NON-NEWTONIAN FLUIDS”; and (3) U.S.patent application Ser. No. 11/154,129, filed on Jun. 15, 2005, andentitled “METHOD AND APPARATUS FOR TRANSPORTING A SUBSTRATE USINGNON-NEWTONIAN FLUID,” each of which is incorporated herein by reference.

The proximity head 110 and operations that manage and interface with thefluid supply and control parameters for the meniscus 104 may becontrolled in an automated way using the computer control via theprocessor 150. Thus, aspects of the invention may be practiced withother computer system configurations including hand-held devices,microprocessor systems, microprocessor-based or programmable consumerelectronics, minicomputers, mainframe computers and the like. Theembodiments of the present invention may also be practiced indistributing computing environments where tasks are performed by remoteprocessing devices that are linked through a network.

With the above embodiments in mind, it should be understood that theinvention may employ various computer-implemented operations involvingdata stored in computer systems. These operations are those requiringphysical manipulation of physical quantities. Usually, though notnecessarily, these quantities take the form of electrical or magneticsignals capable of being stored, transferred, combined, compared, andotherwise manipulated. Further, the manipulations performed are oftenreferred to in terms, such as producing, identifying, determining, orcomparing.

Any of the operations described herein that form part of the embodimentof the present invention are useful machine operations. The inventionalso relates to a device or an apparatus for performing theseoperations. The apparatus may be specially constructed for the requiredpurposes, or it may be a general purpose computer selectively activatedor configured by a computer program stored in the computer. Inparticular, various general purpose machines may be used with computerprograms written in accordance with the teachings herein, or it may bemore convenient to construct a more specialized apparatus to perform therequired operations.

The invention can also be embodied as computer readable code on acomputer readable medium. The computer readable medium is any datastorage device that can store data, which can thereafter be read by acomputer system. Examples of the computer readable medium include harddrives, network attached storage (NAS), read-only memory, random-accessmemory, CD-ROMs, CD-Rs, CD-RWs, DVDs, Flash, magnetic tapes, and otheroptical and non-optical data storage devices. The computer readablemedium can also be distributed over a network coupled computer systemsso that the computer readable code is stored and executed in adistributed fashion.

While this invention has been described in terms of several embodiments,it will be appreciated that those skilled in the art upon reading thepreceding specifications and studying the drawings will realize variousalterations, additions, permutations and equivalents thereof. Therefore,it is intended that the present invention includes all such alterations,additions, permutations, and equivalents as fall within the true spiritand scope of the invention. In the claims, elements and/or steps do notimply any particular order of operation, unless explicitly stated in theclaims.

1. A method of monitoring meniscus processing of a wafer surface tostabilize a meniscus, the processing being in response to a currentrecipe that defines a desired gap between the wafer surface and aproximity head, the method comprising the operations of: monitoringcurrent meniscus processing to determine that a current gap is otherthan the desired gap; identifying a calibration recipe that specifiesthe current gap; and continuing the meniscus processing of the wafersurface using process parameters specified by the identified calibrationrecipe.
 2. A method as recited in claim 1, further comprising theoperations of: first determining whether the current gap is within arange of acceptable gaps, wherein the gaps in the range correspond tomeniscus processing with a stable meniscus; and only if the current gapis within the range of acceptable gaps, performing the identifying andcontinuing operations.
 3. A method as recited in claim 1, furthercomprising the operations of: first determining whether the current gapis within a range of acceptable gaps, wherein the gaps in the rangecorrespond to meniscus processing with a stable meniscus; and if thecurrent gap is not within the range of acceptable gaps, discontinuingthe meniscus processing operation.
 4. A method as recited in claim 1,wherein the identifying operation comprises an operation of reviewing aplurality of calibrated recipes each of which is known to specifyprocess parameters for a stable meniscus.
 5. A method as recited inclaim 4, wherein the identifying operation comprises the furtheroperations of: matching the current gap with a gap specified by one ofthe plurality of calibration recipes that specifies a gap that is thesame as the current gap; and identifying the process parameters of theone calibration recipe for use in the continuing operations.
 6. A methodas recited in claim 5, wherein the operation of continuing the meniscusprocessing of the wafer surface comprises the operations of: adjustingthe process parameters of the current recipe to conform to the processparameters specified by the identified one calibration recipe to definea new current recipe; and using the process parameters of the newcurrent recipe in the continuing operation to process the wafers.
 7. Amethod as recited in claim 6, wherein the method comprises the furtheroperations of: generating a process control signal representing theprocess parameters of the new current recipe; and performing theadjusting operation automatically in response to the process controlsignal so that the using operation processes the wafers using theprocess parameters specified by the new current recipe.
 8. A method asrecited in claim 6, wherein the adjusting operation comprises manuallycausing the process parameters of the current recipe to be adjusted toconform to the process parameters specified by the identifiedcalibration recipe.
 9. A method of monitoring meniscus processing of awafer surface to maintain a a meniscus in a stable condition, theprocessing being in response to a current recipe that specifies adesired gap between the wafer surface and a proximity head, the currentrecipe further specifying process parameters for the meniscusprocessing, the method comprising the operations of: monitoring currentmeniscus processing to determine whether a current gap is other than adesired gap and is configured with gap values to allow the meniscus tobe maintained in the stable condition; if the current gap is determinedto be other than the desired gap and is so configured, identifying acalibration recipe that specifies the current gap and calibrated processparameters for use in establishing a stable meniscus across the currentgap; automatically adjusting the process parameters of the currentrecipe to the process parameters of the identified calibration recipe;and continuing the meniscus processing of the wafer surface using theprocess parameters specified by the identified calibration recipe.